Pressure-induced metallization in MoSe2 under different pressure conditions
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چکیده
منابع مشابه
Pressure-induced metallization in Mg2Si
Mg2Si with narrow band gap has attracted increasing interest for its great potential applications. Theoretical calculations have predicted the metallization of Mg2Si under high pressure. In this work, the electrical resistance and Raman spectrum measurements of semiconducting Mg2Si were performed to investigate the metallization of Mg2Si by using diamond anvil cells and strip opposite anvils. A...
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There is a great interest in electronic transitions in hydrogen-rich materials under extreme conditions. It has been recently suggested that the group IVa hydrides such as methane (CH(4)), silane (SiH(4)), and germane (GeH(4)) become metallic at far lower pressures than pure hydrogen at equivalent densities because the hydrogen is chemically compressed in group IVa hydride compounds. Here we re...
متن کاملPressure-induced metallization in solid boron
Different phases of solid boron under high pressure are studied by first principles calculations. The α-B12 structure is found to be stable up to 270 GPa. Its semiconductor band gap (1.72 eV) decreases continuously to zero around 160 GPa, where the material transforms to a weak metal. The metallicity, as measured by the density of states at the Fermi level, enhances as the pressure is further i...
متن کاملPressure-induced phase transitions and metallization in VO2
Bai, L., Li, Q., Corr, S. A., Meng, Y., Park, C., Sinogeikin, S. V., Ko, C., Wu, J., and Shen, G. (2015) Pressure-induced phase transitions and metallization in VO2. Physical Review B, 91(10), 104110. Copyright © 2015 American Physical Society A copy can be downloaded for personal non-commercial research or study, without prior permission or charge Content must not be changed in any way or repr...
متن کاملPressure-induced iso-structural phase transition and metallization in WSe2
We present in situ high-pressure synchrotron X-ray diffraction (XRD) and Raman spectroscopy study, and electrical transport measurement of single crystal WSe2 in diamond anvil cells with pressures up to 54.0-62.8 GPa. The XRD and Raman results show that the phase undergoes a pressure-induced iso-structural transition via layer sliding, beginning at 28.5 GPa and not being completed up to around ...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2019
ISSN: 2046-2069
DOI: 10.1039/c8ra09441a